个人简介
姓名：潘圆圆
性别：女
电话：0532-86981317
民族：汉族
单位：重质油国家重点实验室
文化程度：博士
电子邮箱：yuanyuanpan@upc.edu.cn
研究领域
新能源材料及器件的理论计算研究，表面催化机理研究。
教育经历
2018/08–至今 中国石油大学（华东），师资博士后；
2013/09–2018/07 北京大学，凝聚态物理，博士；
2016/08–2017/08 美国圣路易斯-华盛顿大学，联合培养博士。
2009/09–2013/06 中国石油大学（华东），应用物理学，学士；
科研成果
1. Pan, Y.; Wang, Y.; Ye, M.; Quhe, R.; Zhong, H.; Song, Z.; Peng, X.; Yu, D.; Yang, J.; Shi, J.; Lu, J., Monolayer Phosphorene–Metal Contacts. Chem. Mater. 2016,28 (7), 2100-2109.
2. Lei, B.†; Pan, Y. †; Hu, Z.; Zhang, J.; Xiang, D.; Zheng, Y.; Guo, R.; Han, C.; Wang, L.; Lu, J.; Yang, L.; Chen, W., Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization. ACS Nano 2018,12, 2070-2077.
3. Pan, Y.; Wang, Y.; Wang, L.; Zhong, H.; Quhe, R.; Ni, Z.; Ye, M.; Mei, W. N.; Shi, J.; Guo, W.; Yang, J.; Lu, J., Graphdiyne-metal contacts and graphdiyne transistors. Nanoscale 2015,7 (5), 2116-27.
4. Pan, Y.; Dan, Y.; Wang, Y.; Ye, M.; Zhang, H.; Quhe, R.; Zhang, X.; Li, J.; Guo, W.; Yang, L.; Lu, J., Schottky Barriers in Bilayer Phosphorene Transistors. ACS Appl. Mater. Interfaces 2017,9 (14), 12694-12705.
5. Pan, Y.; Gao, S.; Yang, L.; Lu, J., Dependence of excited-state properties of tellurium on dimensionality: From bulk to two dimensions to one dimensions. Phys. Rev. B 2018,98 (8).
6. Pan, Y.; Li, S.; Ye, M.; Quhe, R.; Song, Z.; Wang, Y.; Zheng, J.; Pan, F.; Guo, W.; Yang, J.; Lu, J., Interfacial Properties of Monolayer MoSe2–Metal Contacts. J. Phys. Chem. C 2016,120 (24), 13063-13070.
7. Zhang, X. †; Pan, Y. †; Ye, M.; Quhe, R.; Wang, Y.; Guo, Y.; Zhang, H.; Dan, Y.; Song, Z.; Li, J.; Yang, J.; Guo, W.; Lu, J., Three-layer phosphorene-metal interfaces. Nano Research 2017,DOI: 10.1007/s12274‐017‐1680‐6.
8. Xiao, W. †; Li, S. †; Pan, Y. †; Jie, J.; Xin, C.; Zheng, J.; Lu, J.; Pan, F., Interfacial Properties of Monolayer SnS-Metal Contacts. J. Phys. Chem. C 2018,122 (23), 12322-12331.
9. Quhe, R.; Peng, X.; Pan, Y.; Ye, M.; Wang, Y.; Zhang, H.; Feng, S.; Zhang, Q.; Shi, J.; Yang, J.; Yu, D.; Lei, M.; Lu, J., Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough? ACS Appl. Mater. Interfaces 2017,9 (4), 3959-3966.
10. Yan, J.; Zhang, X.; Pan, Y.; Li, J.; Shi, B.; Liu, S.; Yang, J.; Song, Z.; Zhang, H.; Ye, M.; Quhe, R.; Wang, Y.; Yang, J.; Pan, F.; Lu, J., Monolayer tellurene–metal contacts. J. Mater. Chem. C 2018,6 (23), 6153-6163.
11. Li, H.; Shi, B.; Pan, Y.; Li, J.; Xu, L.; Xu, L.; Zhang, Z.; Pan, F.; Lu, J., Sub-5 nm monolayer black phosphorene tunneling transistors. Nanotechnology 2018.
12. Zhong, H.; Quhe, R.; Wang, Y.; Ni, Z.; Ye, M.; Song, Z.; Pan, Y.; Yang, J.; Yang, L.; Lei, M.; Shi, J.; Lu, J., Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations. Sci. Rep. 2016,6, 21786.
13. Guo, Y.; Pan, F.; Ye, M.; Sun, X.; Wang, Y.; Li, J.; Zhang, X.; Zhang, H.; Pan, Y.; Song, Z.; Yang, J.; Lu, J., Monolayer Bismuthene-Metal Contacts: A Theoretical Study. ACS Appl. Mater. Interfaces 2017.
14. Wang, Y.; Huang, P.; Ye, M.; Quhe, R.; Pan, Y.; Zhang, H.; Zhong, H.; Shi, J.; Lu, J., Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene. Chem. Mater. 2017,29 (5), 2191-2201.
15. Liu, S.; Li, J.; Shi, B.; Zhang, X.; Pan, Y.; Ye, M.; Quhe, R.; Wang, Y.; Zhang, H.; Yan, J.; Xu, L.; Guo, Y.; Pan, F.; Lu, J., Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions. J. Mater. Chem. C 2018,6 (21), 5651-5661.
16. Li, H.; Tie, J.; Li, J.; Ye, M.; Zhang, H.; Zhang, X.; Pan, Y.; Wang, Y.; Quhe, R.; Pan, F.; Lu, J., High-performance sub-10-nm monolayer black phosphorene tunneling transistors. Nano Res. 2017,11 (5), 2658–2668.
17. Wang, Y.; Li, J.; Xiong, J.; Pan, Y.; Ye, M.; Guo, Y.; Zhang, H.; Quhe, R.; Lu, J., Does the Dirac cone of germanene exist on metal substrates? Phys. Chem. Chem. Phys. 2016,18 (28), 19451-6.
18. Li, Q.; Yang, J.; Quhe, R.; Zhang, Q.; Xu, L.; Pan, Y.; Lei, M.; Lu, J., Ohmic contacts between monolayer WSe 2 and two-dimensional titanium carbides. Carbon 2018,135, 125-133.
19. Guo, Y.; Pan, F.; Ye, M.; Wang, Y.; Pan, Y.; Zhang, X.; Li, J.; Zhang, H.; Lu, J., Interfacial properties of stanene–metal contacts. 2D Mater. 2016,3 (3), 035020.
20. Wang, Y.; Ye, M.; Weng, M.; Li, J.; Zhang, X.; Zhang, H.; Guo, Y.; Pan, Y.; Xiao, L.; Liu, J.; Pan, F.; Lu, J., Electrical Contacts in Monolayer Arsenene Devices. ACS Appl. Mater. Interfaces 2017,9 (34), 29273-29284.
21. Zhang, H.; Ye, M.; Wang, Y.; Quhe, R.; Pan, Y.; Guo, Y.; Song, Z.; Yang, J.; Guo, W.; Lu, J., Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions. Phys. Chem. Chem. Phys. 2016,18 (24), 16367-76.
22. So, C.; Zhang, H.; Wang, Y.; Ye, M.; Pan, Y.; Quhe, R.; Li, J. Z.; Zhang, X.; Zhou, Y.; Lu, J., A computational study of monolayer hexagonal WTe2 to metal interfaces. Phys. Status Solidi B 2017, 1600837.
